Plasma chemical vapor phase reactor

Abstract

Abstract PURPOSE:To improve the growth rate of films by providing magnets generating magnetic field parallel with the surface of the electrodes of a plasma chemical vapor phase reactor in the neighborhood of the surface of one of the electrodes of said device. CONSTITUTION:In a plasma chemical reactor producing semiconductor films such as silicon nitride films or the like, magnets 12, 12' are provided near the surface of one substrate 7, so that the magnetic lines 13 of force created by these are made parallel with the surface near the surface of a silicon wafer. Then, the electrons generated by plasma discharge are confined around said magnetic lines of force and therefore the density of plasma is icreased considerably near the magnetic lines of force, that is, on the surface of the silicon wafer, and the growth rate of the films is increased.

Inventors

• 👤 Hiroji Harada
• 👤 Shinichi Sato
• 👤 Hayaaki Fukumoto
• 👤 Hirozo Takano
• 👤 Hideo Kotani
• 👤 Shinpei Kayano

Bibliographic Details