Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device with a high integration degree minimizing the parastic capacitance by providing a resistor of a desired value on a field oxide film while elements are formed on the surface of a semiconductor substrate without increasing production processes. CONSTITUTION:A field oxide film 3 on an N type Si layer 1 is superlaid with a nonadditive poly Si 4, which is oxidized to form an SiO2 film with an Si3N4 mask 5. With a resist mask 7, B ion is injected into the film to form a P base layer 8 while a layer 4 is made conductive. A resistor 4' can be obtained as desired by selecting the dimensions of the layer 4 considering the concentration of impurities. After the removal of the masks 5 and 7, openings 9 and 10 are etched selectively in the film 6, which is covered with an SiO2 12 except for both ends of 11 and 11' of the resistor 4' and poly Si layers 13, 14, 15 and 15' are laid thereon. Again, B ion is injected selectively to turn the base electrode drawing port point and layers 15 and 15' a P<+> layer. Thereafter, through the layer 14, P is introduced to create an N<+> emitter and Al electrodes 17-19, and 19' and a collector electrode are formed finally.

Inventors

• 👤 Tadashi Kirisako

Bibliographic Details