Chip for face down bonding and production thereof

Abstract

Abstract PURPOSE:To make a chip for wire bonding for common use and to reduce production costs by a method wherein a metal conductive layer which is corrosion resistant and to be connected to the pad part of a wiring layer is formed and extended to the desired region on a passivation film and a bump is provided on the conductive layer. CONSTITUTION:A passivation film 4 (prasma nitrified film) is piled on the whole surface of a wafer 2 where a circuit element and a wiring layer 1 have been formed, while an opening is made in a bonding pad part. Next a conductive layer 6 consisting of, for instance, a Ti layer 7, a Cu layer 8 and a Ti layer 9 is deposited in order by evaporation and then coated with polyimide resin. After this, a mask 10 in which a bump hole 11 and the unnecessary region of the conductive layer 6 have been etched is provided. Next the whole region excluding the hole 11 is covered with a photoresist mask 12 and the exposed Ti layer 9 is etched. Then an Ni layer 13, an Sn layer 14 and a Pb layer 15 are plated in order. Next after the resist mask 12 is removed toform a bump 16 by means of heat processing, the unnecessary conductive layer 6 and the mask layer 10 are removed in order by etching them. By so doing, it becomes unnecessary to pariticularly design a chip for facing down, thus reducing production costs.

Inventors

• 👤 Toru Kawanobe
• 👤 Keiji Miyamoto

Bibliographic Details