Surface treating method for semiconductor

Abstract

Abstract PURPOSE:To remove a pollutant on the surface of the semiconductor due to dry etching by irradiating pulse-shaped rays onto the surface of the semiconductor and heating the surface of the semiconductor. CONSTITUTION:A wafer is placed on a wafer supporting base 2 in a quartz chamber 1, and gas is passed in the chamber 1 through a gas discharger 5 changing gas into a plasmic substance, and discharged from a gas discharge pipe 4. A laser oscillator 6, which can scan and beams therefrom are sufficiently diaphragmed on the surface of the semiconductor, is mounted onto the chamber 1 and pulse rays are used as the laser rays. Since only a surface layer of the semiconductor is heated through the scanning of the laser rays changed into pulses in this manner, a reactant of a radical and the pollutant is easily gasified and dispersed, and the surface treating method can double as laser annealing when the conditions of surface treating are optimized.

Inventors

• 👤 Masanao Itoga
• 👤 Hiroshi Yano

Bibliographic Details