semiconductor equipment

Abstract

Abstract PURPOSE:To lower ON resistance by making the resistivity of the surface layer of an N type base body functioning as a drain lower than that of the base body in a vertical power MOSFET. CONSTITUTION:The MOSFET is formed in such a manner that a P type region 2 is shaped to the surface of the N type Si base body 1 serving as the drain, an N<+> type source 3 is formed to the surface of the region 2, a P type region surface 2a between a source and the drain is used as a channel section and a gate electrode is shaped onto the surface 2a through an insulating film 4. The resistivity of the N layer 6 of the surface layer of the base body 1 is made lower than that of the base body 1, and the resistivity value is kept within an extent that the FET is pinched off when reverse voltage is applied to a PN junction. According to this structure, resistance in the lateral direction is reduced because of the layer 6, and all ON resistance can be decreased even when resistance in the vertical direction is large.

Inventors

• 👤 Hideaki Kato
• 👤 秀明 加藤
• 👤 Tetsuo Iijima
• 👤 哲郎 飯島

Bibliographic Details