Manufacture of thin film semiconductor device

Abstract

Abstract PURPOSE:To obtain a thin film semiconductor device with less defect parts by removing failure parts by a method wherein defect parts contained in a thin film semiconductor layer are separated from a thin film semiconductor region which serves as a base. CONSTITUTION:An amorphous Si layer 2 having junctions such as P-I-N and P-N is formed to film on a conductive substrate 1 of a large area, and then a clear electrode film 3 is laminated. The large area amorphous Si film is separated into small area amorphous Si regions by means of a chemical or physical method. The electrical performance test for each amorphous Si solar battery separated is performed, and then only normal ones are so connected as to obtain a desired output. An electrode terminal 6 is laminated on each segment, collector wires 7 are adhered by utilizing spaces unnecessitated due to separation, and then the electrode terminal 6 formed on non-defective segment is connected to the collector wire 7. The electrode terminal 6 of a defective segment is not connected.

Inventors

• 👤 Noboru Hanioka
• 👤 埴岡　登

Bibliographic Details