Manufacture of semiconductor substrate

Abstract

Abstract PURPOSE:To obtain the polycrystalline Si substrate suitable for an IGFET, in which mobility is high and leakage currents are little, by depositing a polycrystalline Si film on the surface of an insulating substrate or a conductive substrate coated with an insulating thin-film, radiating laser beams filled with H2 gas and increasing the crystal grain size of the Si film. CONSTITUTION:A sample base 4 is disposed in a vessel 6 made of a metal, the insulating substrate or the conductive substrate 5, the surface thereof has the insulating thin-film, is placed on the base 4, H2 gas is fed in from an opening formed to the bottom, and the polycrystalline Si film is vapor-grown on the substrate 5 while discharging H2 gas from an exhaust system. Nd:YAG Laser beams or Ar ion laser beams from a laser light source 1 are projected to glass 7 set up to the upper side of the vessel 6 through a scanning mirror 2 and a convergent lens 3, and the Si film is irradiated. Accordingly, the inside of the vessel 6 is filled previously with H2 gas, and the surface of the Si film is scanned uniformly while turning the mirror 2. That is, H2 is bonded with the dangling bonds of a Si grain boundary, and the bonds are terminated and grain size is increased.

Inventors

• 👤 Kunio Nakamura
• 👤 中村　邦雄

Bibliographic Details