Semiconductor device

Abstract

Abstract PURPOSE:To realize stable transistor performance characteristics by preventing punch-throughs by a method wherein a gate is rendered to be thicker at a step along the boundary between an element region and a field oxide film. CONSTITUTION:A polycrystalline Si gate 11 is abruptly larger, in the vicinity of a step 8 positioned along the periphery of an element isolating field oxide film 2 surrounding an element region 3, than its middle-portion length L. The reduction in gate thickness created due to the step 8 can nor be neglected because of the enlargement LL virtually eliminating any effect detrimental to transistor performance characteristics. This method realizes MOS transistors with their characteristics uniform.

Inventors

• 👤 Shigeru Iwata
• 👤 岩田　滋

Bibliographic Details