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JPS60124344A Expired / Lapsed JP ⏱️ 0.0 years remaining

Ion implantation device

Assignee: NEC Corp
•
Filing: 1983-12-08
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Granted: —
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Expires: 2003-12-08
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Abstract

Abstract PURPOSE:To make it possible to evaluate the uniformity of ion implantation in a short time by rotating a disk, on which small holes are provided each at different distances from its center and at a certain interval of angle, in front of a Faraday cup. CONSTITUTION:When a disk 2 is rotated clockwise, the light rays pass through a slit 3 and a standard pulse signal 8a goes into a control section 10; then a control signal 10a(1) is outputted to turn on a switch 111, and a voltage signal 6a generated by an ion beam 1a which has passed through a small hole 41 is led to an integrator 121, indicating an integrated output at its output terminal (1). When the disk 2 is rotated, the ion beam 1a passes through small holes 42 to 4n successively, and the integrated outputs corresponding to this ion beam 1a are each indicated at the output terminals (2)-(n). Because the small holes 41 to 4n are set at different distances from the center of the disk 2, the radiant distribution of ions radiated on the disk 2 can be obtained from the outputs indicated on the output terminals (1)-(n).

Inventors

  • 👤 Kinji Tsunenari
  • 👤 欣嗣 恒成

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 23:13
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171

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