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JPS60247948A Expired / Lapsed JP ⏱️ 0.0 years remaining

Manufacture of semiconductor device

Assignee: Hitachi Ltd
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Filing: 1984-05-23
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Granted: —
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Expires: 2004-05-23
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Abstract

Abstract PURPOSE:To form a high accurate and fine wiring on a substrate by a method wherein photosensitive polyimide is used as a lift-off material, in case that the wiring is formed by means that metal is deposited partially onto the substrate. CONSTITUTION:Photosensitive polyimide material 5 is applied as a mask for lift- off onto the surface of a substrate 1. Thereafter, sensitization is performed using ultraviolet ray through a mask 3. After sensitization, development is performed and unexposed part of a photosensitive polyimide film is dissolved and removed, and forms a patternized photosensitive polyimide layer 6. Next, metal such as Al and the like, is evaporated on all over the surface and Al layer 7a is deposited directly to the portion where polyimide film 6 is not formalized and Al layer 7a is deposited to the portion where polyimide film is formalized. Electrodes which are consist of the required patterning of Al layer 7a is obtained by means of removing the polyimide film at the same time as the Al layer.

Inventors

  • 👤 Toshio Okubo
  • 👤 利男 大久保
  • 👤 Tokio Kato
  • 👤 加藤 登季男

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 20:27
CPC Classifications
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