Semiconductor device

Abstract

Abstract PURPOSE:To contrive to reduce the noise due to parasitic capacitance in a semiconductor integrated circuit device havng the structure of multilayer wiring. CONSTITUTION:Wirings 4 and 5 intersect with each other over an insulation film 2 on a semiconductor substrate 1, and a protection film 6 is formed thereon. A wiring 7 is inserted between the wirings 4 and 5 via insulation film 8. This wiring 7 is constructed so as to cover the whole region of intersection between the wirings 4 and 5 and fixed to a substrate potential. Therefore, the formation of the wiring 7 by means of a metal such as Al having a sufficiently small wiring resistance or poly Si causes no noise due to the parasitic capacitance, because the wiring 7 has the effect of electrical shielding between the wirings 4 and 5 and does not transmits the variation of the potential of one of them to the other.

Inventors

• 👤 Hiromasa Yamamoto
• 👤 山本　裕将

Bibliographic Details