Surface luminescent laser oscillator

Abstract

Abstract PURPOSE:To reduce the oscillation threshold-value current density of the titled oscillator by a method wherein two layers or multilayered active layers are simultaneously activated utilizing tunnel current in reversely biased p<+>-n<+> junctions. CONSTITUTION:An n type GaInAsP layer 12 is grown on an n type InP substrate 11, and moreover, double-hetero structures consisting of n type InP clad layers 13, GaInAsP active layers 14 and p type InP clad layers 15 are respectively grown in a multilayer structure through high-impurity concentration p<+>-n<+> junctions of p<+> type InP layers 16 and n<+> type InP layers 17. Voltage is impressed in the forward direction extending over the direction and when tunnel current begins to flow between the p<+>-n<+> junctions 16 and 17 doped in a high-impurity concentration in a reversely biased condition, current begins to flow on the whole laser, carriers are injected in the layers 14 and an inverted population is formed. Resonance generates between optical resonance path 23 and laser beams 24 are outputted from the substrate 11. As current of the same current density as the layers 14 runs on the layers 14, the active regions can be made longer, thereby enabling to reduce the oscillation threshold-value current density.

Inventors

• 👤 Kenichi Iga
• 👤 伊賀　健一
• 👤 Yuji Kotaki
• 👤 小滝　裕二
• 👤 Makoto Ishikawa
• 👤 信 石川

Bibliographic Details