Memory device

Abstract

Abstract PURPOSE:To obtain a one transistor memory cell type semiconductor memory device, the degree of integration thereof is improved and which can be manufactured with excellent reproducibility, by using a plasma nitride film as a dielectric substance for capacitance for storing charges and using a plasma oxynitride film as a dielectric substance for a transistor section. CONSTITUTION:A silicon oxide layer 2 is formed to the surface of a P type silicon single crystal substrate 1. The surface of the substrate 1 is oxidized, and the silicon oxide layer is removed and a region of silicon oxide 3 is formed. silicon oxide is changed into a plasma oxynitride film and a silicon single crystal section into a plasma nitride film through plasma nitriding by using NH3 gas. A polycrystalline silicon layer is deposited on an upper surface, phosphorus in high concentration is diffused, the polycrystalline silicon layer is removed, and a region of polycrystalline silicon 6 is formed. A silicon oxide layer 7 is shaped to the surface of polycrystalline silicon through heat treatment in an oxidizing atmosphere. A polycrystalline silicon layer is deposited on the whole surface, phosphorus in high concentration is diffused, the silicon layer is removed, and a region of polycrystalline silicon 8 is formed. Lastly, phosphorus glass 11 is deposited, and an opening is bored to the glass, thus manufacturing a one transistor memory cell type semiconductor memory device.

Inventors

• 👤 Takahisa Kusaka
• 👤 卓久 日下
• 👤 Akira Shintani
• 👤 新谷　昭

Bibliographic Details