Semiconductor device

Abstract

Abstract PURPOSE:To contrive to improve the mounting density and to enlarge the function by a method wherein functional elements integrated in the title deviced are organically connected by means of conductive horizontal wirings connecting the functional elements and vertical wirings provided in the region other than that of the elements. CONSTITUTION:An MOSFET diffused layer 4, a channel region 5, and a gate electrode 6 are formed on a semiconductor substrate 1 and the second insulation layer 2. Next, the second insulation layer 7 and the first aperture 9 are provided. The third insulation layer 11 is formed on the surface 10 on the substrate. The first vertical wiring 12 is formed by burying a conductive material in the aperture. Then, the horizontal wirings 13 of Al or the like are formed, thus connecting the functional elements and the first vertical wiring to the elements. The fourth insulation layer 14 is formed. and the second aperture 15 is provided at the desired position. After the aperture is formed, the conductive material is formed over the entire surface, and, with the second vertical wiring 16 containing bumps 16a left, the other is removed.

Inventors

• 👤 Tadayoshi Enomoto
• 👤 榎本　忠儀
• 👤 Masaaki Yasumoto
• 👤 安本　雅昭

Bibliographic Details