Semiconductor light emitting device

Abstract

Abstract PURPOSE:To improve the output of light, by providing a semiconductor light emitting element chip, in which the surface of a III-V group semiconductor layer having P-N junctions is coated by a silicon nitride film, and providing a transparent resin layer, which seals said chip assembled on a stem. CONSTITUTION:P-N junctions are formed and aluminum electrodes 3 are formed on a GaAs wafer. The wafer undergoes dicing on a dicing sheet 10. A silicon nitride film 5 is deposited by a pressure reduced CVD method or a plasma CVD method under the state the wafer is divided into an individual chip. Then, the electrode 3 is exposed by selective etching. The LED chip manufactured in this way is assembled in a device. The light, which is generated in the light emitting region in a GaAs layer, is outputted to a transparent resin layer 4 through a silicon nitride film 5.

Inventors

• 👤 Yuji Kawamoto
• 👤 川本　裕治

Bibliographic Details