Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable the formation of corrugation of accurate and sufficient depth by a method wherein a corrugation is formed in a metallic film by using a thin photo resist film with patterns of corrugation formed by interference exposure as a mask, and a corrugation is formed in a thick photo resist film by using the metallic fiom as a mask. CONSTITUTION:A photo resist film 2 approx. 1mum thick is formed on an InP substrate 1. Next, a Cr film 3 approx. 150Angstrom thick is formed on the photo resist film 2. Further, a photo resist film 4 approx. 800Angstrom is formed on the Cr film 3. Then, a pattern of corrugation is formed in the photo resist film 4 by applying interference exposure with laser beams and then by development. A corrugation is formed by etching the Cr film 3 by using the film 4 as a mask. A corrugation is formed by etching the thick photo resist film 2 by using the Cr film 3 as a mask. A sufficiently deep corrugation 1A is formed in the InP substrate 1 by using this film 2 as a mask.

Inventors

• 👤 Hisao Sudo
• 👤 久男 須藤

Bibliographic Details