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JPS624315A Expired / Lapsed JP ⏱️ 0.0 years remaining

Susceptor for vapor growth apparatus

Assignee: Toshiba Corp
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Filing: 1985-06-29
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Granted: —
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Expires: 2005-06-29
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Abstract

Abstract PURPOSE:To make the temperature distribution in a heated substrate uniform and avoid slippage by a method wherein the shape of the bottom surface of a substrate accomodating part provided on the surface of a susceptor main body is made to be convex and protruded parts, which support the substrate, are provided on the portions of the bottom surface. CONSTITUTION:The bottom surface 12 of a substrate-accomodating part of a susceptor 11 has a convex shape. Protruded parts 13 are provided on the portions of the bottom surface 12 and a silicon substrate 14 is supported by those protruded parts 13. With the susceptor 11 composed like this, the substrate 14 is heated by radiant heat from the susceptor 11. As the distance between the susceptor 11 and the circumference part of the substrate 14 where the temperature rises relatively easily is larger than the distance between the susceptor 11 and the center part of the substrate 14, the temperature distribution in the substrate 14 can be made uniform.

Inventors

  • 👤 Hideki Shirai
  • 👤 秀樹 白井
  • 👤 Yoshiaki Matsushita
  • 👤 松下 嘉明
  • 👤 Yuichi Mikata
  • 👤 見方 裕一
  • 👤 Shuichi Samata
  • 👤 秀一 佐俣

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 06:48
CPC Classifications
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