Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To achieve a highly integrated semiconductor device, by providing an N<+> type buried layer and a P<+> type buried layer constituting a part of an element isolation region, on the surface of a P-type silicon substrate, in the manner such that they are contacted with each other. CONSTITUTION:A polycrystalline film 2 is formed on the surface of a P-type silicon substrate 1 and arsenic ions are implanted thereinto. The film 2 is then etched with the use of a CVD oxide film 3 as a mask. Thermally oxidized films 5 and N<+> type buried layers 6 are provided. Thereafter, boron ions are implanted to form implanted layers 7. The layers 7 are activated to provide P<+> type buried layers 8. The substrate is subjected to hydrogen burning oxidation, whereby the film 2 is converted into an oxide film. An N-type epitaxial layer 9 is deposited on the whole surface of the substrate 1. The boron ions are diffused into the layer 9 so as to form P-type diffused layers 10 each of which provides an isolation region in cooperation with the layer 8. Emitter regions 12 and collector lead-out regions 13 are then formed.

Inventors

• 👤 Shigeru Komatsu
• 👤 茂 小松

Bibliographic Details