Formation of photoelectric conversion device

Abstract

Abstract PURPOSE:To form a plurality of generating sections, by projecting a laser beam having a power density of 1-5 J/cm<3> on a photoelectric conversion element, which has a conducting film formed on an unsingle crystal semiconductor layer and a second electrode on said film, and dividing the second electrode into a plurality of parts. CONSTITUTION:A light transmitting conducting film 2 is formed on the upper surface of a light transmitting substrate 1 so as to provide the irregular surface. Thereafter, a first groove 17 is formed. The film 2 constituting the first electrode is electrically isolated and insulated into regions 14 and 19. Thereafter, an unsingle crystal semiconductor layer 3 is formed. A second groove 18 is formed on the left side of the first groove 17 by an LS process using excimer lase having a power density within a range of 1-5 J/cm<3>. Thereafter, a metal film 4 for the second electrode is provided on the upper surface of the semiconductor layer 3. Thus a photoelectric conversion device, in which a plurality of elements 11 and 13 are connected in series with a linking part 12, is formed.

Inventors

• 👤 Hisato Shinohara
• 👤 篠原　久人
• 👤 Takashi Inushima
• 👤 犬島　喬
• 👤 Kunio Suzuki
• 👤 邦夫 鈴木
• 👤 Takeshi Fukada
• 👤 武 深田
• 👤 Mikio Kanehana
• 👤 金花　美樹雄
• 👤 Masayoshi Abe
• 👤 阿部　雅芳
• 👤 Katsuhiko Shibata
• 👤 克彦 柴田
• 👤 Masato Usuda
• 👤 真人 薄田

Bibliographic Details