Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To reduce the insulating volume of aluminum wirings, and to reduce the occurrence of hillocks and the capacity between the wirings by forming the wiring so that its sectional shape is a trapezoidal shape. CONSTITUTION:The sectional shape of aluminum wirings 2 is the same as a conventional one in its bottom side, but since it is narrower in width toward a perpendicular direction to the surface of a silicon wafer 1 in a so-called trapezoidal shape, its sectional area is smaller than conventional aluminum wirings, and its insulating volume becomes small. As a result, the occurrence of hillocks is reduced. A mean distance between adjacent aluminum wirings 2 is larger than a conventional example, and a capacity formed between the adjacent wirings 2 is reduced.

Inventors

• 👤 Shinya Kawarabayashi

Bibliographic Details