Superconducting transistor and manufacture thereof

Abstract

Abstract PURPOSE: To obtain a superconducting transistor overcoming the limits of the high density and the high speed of a semiconductor device by a method wherein an oxide film having a channel layer in which phase transition of superconductor-semiconductor-insulator is created is employed and source and drain electrodes and a gate electrode which controls the carrier concentration in the channel layer are provided. CONSTITUTION: A silicon oxide film 2 is formed on the surface of a p-type Si substrate 1 doped with boron. (La 0.95 Sr 0.05 ) 2 CuO 4 is applied by sputtering to form an oxide semiconductor film 3. An oxide superconducting film made of (La 0.85 Sr 0.15 ) 2 CuO 3.9 is formed by sputtering in the same way and patterned to form sorce and drain main electrodes 4 1 and 5 1 . The distance between the main electrodes 4 and 5 is 0.2μm. Terminal electrodes 4 2 and 5 2 composed of Au films are formed and a gate electrode 6 composed of an Au film is formed on the rear surface of the substrate 1. In this device, the surface part of the oxide semiconductor film 3 is used as a channel layer and phase transition between a high resistance semiconductor and a superconductor is created in the channel layer by controlling the carrier concentration in the channel layer by the gate electrode 6. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Koichi Mizushima

Bibliographic Details