US2929751A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of semiconductor devices
Assignee: The General Electric Company PLC
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Filing: 1957-11-06
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Granted: 1960-03-22
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Expires: 1977-11-06
Abstract
No abstract record available.
Inventors
- 👤 Blakelock Harold Dennis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 08:04
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/04
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
127 words
A METHOD OF FORMING A JUNCTION IN A SEMICONDUCTOR BY APPLYING TO THE SURFACE OF A SOLID BODY OF THE SEMICONDUCTOR A MATERIAL WHICH CNSISTS AT LEAST PARTLY OF A SUBSTANCE CAPABLE OF ACTING IN THE SEMICONDUCTOR AS A SIGNIFICANT IMPURITY, COMPRISING THE STEPS OF FUSING A QUANTITY OF THE SAID MATERIAL IN CONTACT WITH SAID SURFACE IN VACUO, AND NEXT HEATING THE FUSED MATERIAL FURTHER IN A NON-OXIDIZING ATMOSPHERE AT AT LEAST ABOUT ATMOSPHERIC PRESSURE, THE FUSED MATERIAL BEING CAUSED TO DISSOLVE PART OF THE BODY, AND SUBSEQUENTLY ALLOWING THE FUSED MATERIAL TO SOLIDIFY IN SAID NON-OXIDIZING ATMOSPHERE IN SUCH A MANNER THAT A LAYER OF THE SEMICONDUCTOR CONTAINING THE SAID SUBSTANCE IS REDEPOSITED FROM THE FUSED MATERIAL CONTIGUOUS WITH THE REMAINDER OF THE SEMICONDUCTOR BODY.
Claim 2
Independent Claim
127 words
A METHOD OF FORMING A JUNCTION IN A SEMICONDUCTOR BY APPLYING TO THE SURFACE OF A SOLID BODY OF THE SEMICONDUCTOR A MATERIAL WHICH CNSISTS AT LEAST PARTLY OF A SUBSTANCE CAPABLE OF ACTING IN THE SEMICONDUCTOR AS A SIGNIFICANT IMPURITY, COMPRISING THE STEPS OF FUSING A QUANTITY OF THE SAID MATERIAL IN CONTACT WITH SAID SURFACE IN VACUO, AND NEXT HEATING THE FUSED MATERIAL FURTHER IN A NON-OXIDIZING ATMOSPHERE AT AT LEAST ABOUT ATMOSPHERIC PRESSURE, THE FUSED MATERIAL BEING CAUSED TO DISSOLVE PART OF THE BODY, AND SUBSEQUENTLY ALLOWING THE FUSED MATERIAL TO SOLIDIFY IN SAID NON-OXIDIZING ATMOSPHERE IN SUCH A MANNER THAT A LAYER OF THE SEMICONDUCTOR CONTAINING THE SAID SUBSTANCE IS REDEPOSITED FROM THE FUSED MATERIAL CONTIGUOUS WITH THE REMAINDER OF THE SEMICONDUCTOR BODY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-03-22 | 1963-09-21 | 1964-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-03-22 | 1967-09-21 | 1968-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-03-22 | 1971-09-21 | 1972-03-22 | $7700.00 | Window Closed / Lapsed |