US2943918A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing dense, extra pure silicon
Assignee: Pechiney SA
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Filing: 1957-02-01
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Granted: 1960-07-05
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Expires: 1977-02-01
Abstract
No abstract record available.
Inventors
- 👤 Pauls Gerhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:43
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/04; C01B33/08; C01B33/107
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
119 words
PROCESS FOR PRODUCING DENSE, SPECTROGRAPHICALLY PURE SILICON, COMPRISES THE STEPS OF: CONTACTING IN A REACTION ZONE SILICON CONTAINING ABOUT 5% COPPER WITH GASEOUS HYDROCHLORIC ACID AT A TEMPERATURE NOT IN A EXCESS OF 250 C. TO THEREBY FORM A MIXTURE OF VAPORS CONTAINING TRICHLOROSILANE, SUBJECTING SAID MIXTURE TO SUCCESSIVE DISTILLATIONS UNDER REFLUX CONDITIONS TO PRODUCE TRICHLOROSILANE OF HIGH PURITY, HEATING SAID HIGHLY PURIFIED TRICHLOROSILANE DILUTED WITH HYDROGEN IN A PLURALITY OF DECOMPOSITION ZONES MAINTAINED AT PROGRESSIVELY HIGHER TEMPERATURES, WHEREBY THE INITIAL DECOMPOSITION ZONE IS HEATED TO A TEMPERATURE WITHIN THE RANGE OF 800*-900*C., AND THE FINAL DECOMPOSITION ZONE TO ABOUT 950*C., TO DECOMPOSE THE TRICHLOROSILANE AND PRODUCE A DEPOSIT OF SILICON IN SOLID STATE, AND RECOVERING THE DEPOSITED SILICON.
Claim 2
Dependent Claim
119 words
PROCESS FOR PRODUCING DENSE, SPECTROGRAPHICALLY PURE SILICON, COMPRISES THE STEPS OF: CONTACTING IN A REACTION ZONE SILICON CONTAINING ABOUT 5% COPPER WITH GASEOUS HYDROCHLORIC ACID AT A TEMPERATURE NOT IN A EXCESS OF 250 C. TO THEREBY FORM A MIXTURE OF VAPORS CONTAINING TRICHLOROSILANE, SUBJECTING SAID MIXTURE TO SUCCESSIVE DISTILLATIONS UNDER REFLUX CONDITIONS TO PRODUCE TRICHLOROSILANE OF HIGH PURITY, HEATING SAID HIGHLY PURIFIED TRICHLOROSILANE DILUTED WITH HYDROGEN IN A PLURALITY OF DECOMPOSITION ZONES MAINTAINED AT PROGRESSIVELY HIGHER TEMPERATURES, WHEREBY THE INITIAL DECOMPOSITION ZONE IS HEATED TO A TEMPERATURE WITHIN THE RANGE OF 800*-900*C., AND THE FINAL DECOMPOSITION ZONE TO ABOUT 950*C., TO DECOMPOSE THE TRICHLOROSILANE AND PRODUCE A DEPOSIT OF SILICON IN SOLID STATE, AND RECOVERING THE DEPOSITED SILICON.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-07-05 | 1964-01-04 | 1964-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-07-05 | 1968-01-04 | 1968-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-07-05 | 1972-01-04 | 1972-07-05 | $7700.00 | Window Closed / Lapsed |