US3006734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing pure silicon
Assignee: GE Healthcare UK Ltd
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Filing: 1957-11-14
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Granted: 1961-10-31
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Expires: 1977-11-14
Abstract
No abstract record available.
Inventors
- 👤 Frederick C Cowlard
- 👤 Leighton G Penhale
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:48
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/029; C01B33/04; C01B33/043
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
174 words
A METHOD OF PRODUCING HIGHLY PURE SILICON, COMPRISING SUPPORTING A PURE SILICON SEED CRYSTAL IN AN EVACUATED CHAMBER, HEATING BY THERMAL RADIATION A PORTION OF SAID SEED CRYSTAL, FREE OF CONTACT WITH OTHER BODIES, TO A TEMPERATURE AT WHICH THE ELECTRICAL RESISTANCE OF SAID PORTION IS RESPONSIVE TO INDUCTIVE HEATING, INDUCTIVELY HEATING SAID PORTION TO PRODUCE A SURFACE OF MOLTEN SILICON, DIRECTING A STREAM OF SUBSTANTIALLY PURE SILANE THROUGH A RESTRICTED PASSAGEWAY AGAINST SAID SURFACE, CONTINUOUSLY ROTATING SAID SEED CRYSTAL WHILE MOVING IT RELATIVE TO THE ZONE OF INDUCTIVE HEATING AT A RATE EQUIVALENT TO THAT AT WHICH SILICON IS DEPOSITED ON SAID CRYSTAL AND CONTINUOUSLY EVACUATING SAID CHAMBER TO MAINTAIN A PRESSURE DROP IN SAID PASSAGEWAY OF FROM ABOUT 0.5 TO 1.0 CM. OF MERCURY AND ESTABLISH A RATE OF FLOW OF SAID STREAM TO PRODUCE SILICON BOTH BY GAS PHASE DECOMPOSITION OF SAID SILANE AND BY DECOMPOSITION OF SAID SILANE AT SAID SURFACE AND EFFECT A BUILD-UP OF 1.5 TO 5 GRAMS PER HOUR OF HIGHLY PURE SILICON UPON SAID SEED CRYSTAL.
Claim 2
Independent Claim
174 words
A METHOD OF PRODUCING HIGHLY PURE SILICON, COMPRISING SUPPORTING A PURE SILICON SEED CRYSTAL IN AN EVACUATED CHAMBER, HEATING BY THERMAL RADIATION A PORTION OF SAID SEED CRYSTAL, FREE OF CONTACT WITH OTHER BODIES, TO A TEMPERATURE AT WHICH THE ELECTRICAL RESISTANCE OF SAID PORTION IS RESPONSIVE TO INDUCTIVE HEATING, INDUCTIVELY HEATING SAID PORTION TO PRODUCE A SURFACE OF MOLTEN SILICON, DIRECTING A STREAM OF SUBSTANTIALLY PURE SILANE THROUGH A RESTRICTED PASSAGEWAY AGAINST SAID SURFACE, CONTINUOUSLY ROTATING SAID SEED CRYSTAL WHILE MOVING IT RELATIVE TO THE ZONE OF INDUCTIVE HEATING AT A RATE EQUIVALENT TO THAT AT WHICH SILICON IS DEPOSITED ON SAID CRYSTAL AND CONTINUOUSLY EVACUATING SAID CHAMBER TO MAINTAIN A PRESSURE DROP IN SAID PASSAGEWAY OF FROM ABOUT 0.5 TO 1.0 CM. OF MERCURY AND ESTABLISH A RATE OF FLOW OF SAID STREAM TO PRODUCE SILICON BOTH BY GAS PHASE DECOMPOSITION OF SAID SILANE AND BY DECOMPOSITION OF SAID SILANE AT SAID SURFACE AND EFFECT A BUILD-UP OF 1.5 TO 5 GRAMS PER HOUR OF HIGHLY PURE SILICON UPON SAID SEED CRYSTAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-10-30 | 1965-05-01 | 1965-10-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-10-30 | 1969-05-01 | 1969-10-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-10-30 | 1973-05-01 | 1973-10-31 | $7700.00 | Window Closed / Lapsed |