US3027501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductive device
Assignee: AT&T Inc
•
Filing: 1959-09-29
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Granted: 1962-03-27
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Expires: 1979-09-29
Abstract
No abstract record available.
Inventors
- 👤 Gerald L Pearson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:44
CPC Classifications
H; H10; H10D; H10D10/00; H10D48/00; H10D48/30; H10D48/32; H10D62/00; H10D62/10; H10D62/128; H10D62/129; H10D62/60; H10D62/80; H10D62/83; H10D62/834; H10D8/00; H10D8/70; H10D84/00; H10D84/60; H10D84/645; H10D99/00; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
52 words
A TUNNEL DIODE OF HIGH REVERSE RESISTIVITY COMPRISING A MONOCRYSTALLINE WAFER WHOSE BULK PORTION IS N-TYPE AND HAS A SPECIFIC RESISTIVITY OF LESS THAN ABOUT .001 OHMCENTIMETER, AND WHICH FURTHER INCLUDES A P-TYPE ALUMINUMALLOY REGION AND A P-TYPE ALUMINUM-BORON-ALLOY REGION, AND SEPARATE ELECTRODE CONNECTIONS TO THE ALUMINUM-ALLOY REGION AND THE ALUMINUM-BORON-ALLOY REGION.
Claim 2
Dependent Claim
52 words
A TUNNEL DIODE OF HIGH REVERSE RESISTIVITY COMPRISING A MONOCRYSTALLINE WAFER WHOSE BULK PORTION IS N-TYPE AND HAS A SPECIFIC RESISTIVITY OF LESS THAN ABOUT .001 OHMCENTIMETER, AND WHICH FURTHER INCLUDES A P-TYPE ALUMINUMALLOY REGION AND A P-TYPE ALUMINUM-BORON-ALLOY REGION, AND SEPARATE ELECTRODE CONNECTIONS TO THE ALUMINUM-ALLOY REGION AND THE ALUMINUM-BORON-ALLOY REGION.
References Cited (Backward Citations)
US2829999A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-03-26 | 1965-09-25 | 1966-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-03-26 | 1969-09-25 | 1970-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-03-26 | 1973-09-25 | 1974-03-27 | $7700.00 | Window Closed / Lapsed |