US3068127A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
Assignee: Siemens Schuckertwerke AG
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Filing: 1959-06-02
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Granted: 1962-12-11
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Expires: 1979-06-02
Abstract
No abstract record available.
Inventors
- 👤 Patalong Hubert
- 👤 Herlet Adolf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/60; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
76 words
THE METHOD OF PRODUCING A P-TYPE CONDUCTANCE ZONE AND AN APPERTAINING GOLD CONTACT ELECTRODE ON A MONOCRYSTALLINE SEMICONDUCTOR BODY OF SILICON, WHICH COMPRISES HEATING GOLD IN CONTACT WITH A SURFACE ZONE OF THE SILICON TO FORM A BONDING ALLOY AND ADDING ABOUT 0.001 TO 0.3% BORON TOGETHER WITH ABOUT 0.01% TO 1.0% OF A SUBNSTANCE SELECTED FROM THE GROUP CONSISTING OF GALLIUM AND INDIUM, THE HEATING BEING AT A TEMPERATURE BELOW THE MELTING POINT OF SILICON.
Claim 2
Independent Claim
76 words
THE METHOD OF PRODUCING A P-TYPE CONDUCTANCE ZONE AND AN APPERTAINING GOLD CONTACT ELECTRODE ON A MONOCRYSTALLINE SEMICONDUCTOR BODY OF SILICON, WHICH COMPRISES HEATING GOLD IN CONTACT WITH A SURFACE ZONE OF THE SILICON TO FORM A BONDING ALLOY AND ADDING ABOUT 0.001 TO 0.3% BORON TOGETHER WITH ABOUT 0.01% TO 1.0% OF A SUBNSTANCE SELECTED FROM THE GROUP CONSISTING OF GALLIUM AND INDIUM, THE HEATING BEING AT A TEMPERATURE BELOW THE MELTING POINT OF SILICON.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-12-10 | 1966-06-11 | 1966-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-12-10 | 1970-06-11 | 1970-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-12-10 | 1974-06-11 | 1974-12-11 | $7700.00 | Window Closed / Lapsed |