US3082162A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron processing of semiconducting material
Assignee: Individual
•
Filing: 1960-10-24
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Granted: 1963-03-19
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Expires: 1980-10-24
Abstract
No abstract record available.
Inventors
- 👤 Bernard A Kulp
- 👤 Raymond H Kelley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:59
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; B; B01; B01J; B01J19/00; B01J19/08; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
110 words
THE PROCESS OF INTRODUCING INTERSTITIAL ATOMS OF SULFUR INTO THE LATTICE OF CADMIUM SULFIDE WHICH COMPRISES APPLYING TO A CADMIUM SULFIDE CRYSTAL SURFACE A LAYER OF 6.8 MICROGRAMS OF SULFIDE PER SQUARE CENTIMETER CRYSTAL SURFACE AREA, MAINTAINING THE SULFUR COATED CADMIUM SULFIDE CRYSTAL IN THE TEMPERATURE RANGE OF FROM -- 196* TO 20* C. DURING A 30 MINUTE PERIOD OF ELECTRONS BOMBARDMENT, AND BOMBARDING THE SULFUR COATED SURFACE OF THE CADMIUM SULFIDE CRYSTAL WITH 100 KEV. ELECTRONS FOR 2.3 MICROAMPERE HOURS PER SQUARE CENTIMETER OF BOMBARDED AREA, AND THEREBY DRIVING SULFUR ATOMS FROM THE SULFUR LAYER ON THE SURFACE OF THE CRYSTAL INTO THE LATTICE OF THE CADMIUM SULFIDE CRYSTAL.
Claim 2
Dependent Claim
110 words
THE PROCESS OF INTRODUCING INTERSTITIAL ATOMS OF SULFUR INTO THE LATTICE OF CADMIUM SULFIDE WHICH COMPRISES APPLYING TO A CADMIUM SULFIDE CRYSTAL SURFACE A LAYER OF 6.8 MICROGRAMS OF SULFIDE PER SQUARE CENTIMETER CRYSTAL SURFACE AREA, MAINTAINING THE SULFUR COATED CADMIUM SULFIDE CRYSTAL IN THE TEMPERATURE RANGE OF FROM -- 196* TO 20* C. DURING A 30 MINUTE PERIOD OF ELECTRONS BOMBARDMENT, AND BOMBARDING THE SULFUR COATED SURFACE OF THE CADMIUM SULFIDE CRYSTAL WITH 100 KEV. ELECTRONS FOR 2.3 MICROAMPERE HOURS PER SQUARE CENTIMETER OF BOMBARDED AREA, AND THEREBY DRIVING SULFUR ATOMS FROM THE SULFUR LAYER ON THE SURFACE OF THE CRYSTAL INTO THE LATTICE OF THE CADMIUM SULFIDE CRYSTAL.
Claim 3
Dependent Claim
109 words
THE PROCESS OF INTRODUCING CADMIUM ATOMS INTO A CADMIUM SULFIDE CRYSTAL WHICH COMPRISES APPLYING TO THE SURFACE OF THE CADMIUM SULFIDE CRYSTAL A LAYER OF ABOUT 7 MICROGRAMS OF CADMIUM PER SQUARE CENTIMETER OF CRYSTAL SURFACE AREA, MAINTAINING THE CADMIUM COATED CRYSTAL IN THE TEMPERATURE RANGE OF FROM -- 150* C. TO 20* C. DURING A 30 MINUTE PERIOD OF ELECTRON BOMBARDMENT, AND BOMBARDING THE CADMIUM COATED SURFACE OF THE CADMIUM SULFIDE CRYSTAL WITH 100 KEV. ELECTRONS FOR 2.3 MICROAMPERE HOURS PER SQUARE CENTIMETER OF BOMBARDED AREA AND THEREBY DRIVE CADMIUM ATOMS FROM THE CADMIUM LAYER ON THE SURFACE OF THE CRYSTAL INTO INTERSTITIAL POSITIONS WITHIN THE CRYSTAL LATTICE.
Claim 4
Dependent Claim
109 words
THE PROCESS OF INTRODUCING CADMIUM ATOMS INTO A CADMIUM SULFIDE CRYSTAL WHICH COMPRISES APPLYING TO THE SURFACE OF THE CADMIUM SULFIDE CRYSTAL A LAYER OF ABOUT 7 MICROGRAMS OF CADMIUM PER SQUARE CENTIMETER OF CRYSTAL SURFACE AREA, MAINTAINING THE CADMIUM COATED CRYSTAL IN THE TEMPERATURE RANGE OF FROM -- 150* C. TO 20* C. DURING A 30 MINUTE PERIOD OF ELECTRON BOMBARDMENT, AND BOMBARDING THE CADMIUM COATED SURFACE OF THE CADMIUM SULFIDE CRYSTAL WITH 100 KEV. ELECTRONS FOR 2.3 MICROAMPERE HOURS PER SQUARE CENTIMETER OF BOMBARDED AREA AND THEREBY DRIVE CADMIUM ATOMS FROM THE CADMIUM LAYER ON THE SURFACE OF THE CRYSTAL INTO INTERSTITIAL POSITIONS WITHIN THE CRYSTAL LATTICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-03-18 | 1966-09-17 | 1967-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-03-18 | 1970-09-17 | 1971-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-03-18 | 1974-09-17 | 1975-03-19 | $7700.00 | Window Closed / Lapsed |