Patent US3591790A successfully refreshed from Google Patents.
US3159459A
Expired / Lapsed
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Method for producing semiconductor crystals
Assignee: Siemens Schuckertwerke AG
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Filing: 1959-02-18
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Granted: 1964-12-01
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Expires: 1979-02-18
Abstract
No abstract record available.
Inventors
- 👤 Keller Wolfgang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:35
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/34; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S117/911
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
IN A METHOD OF PRODUCING A SEMICONDUCTOR SINGLE CRYSTAL BY PROCESSING AN ELONGATED PIECE OF SEMICONDUCTOR MELTABLE MATERIAL BY CRUCIBLE-FREE FLOATING ZONE MELTING, THE METHOD COMPRISING SEEDING A LOCATION ON SAID MATERIAL WITH A MONOCRYSTAL OF SAID MATERIAL, AND COMPRISING SUPPORTING THE MATERIAL IN A VERTICAL POSITION, AND HEATING A CROSS-SECTIONAL ZONE OF SAID MATERIAL TO A TEMPERATURE HIGH ENOUGH TO LIQUEFY SAID MATERIAL, THE MOLTEN ZONE BEING SUFFICIENTLY SMALL SO THAT THE SURFACE TENSION OF THE MOLTEN MATERIAL RETAINS IT IN SAID ZONE, AND INCLUDING DISPLACING SAID ZONE-HEATING LONGITUDINALLY WITH RESPECT TO SAID MATERIAL TO SAID LOCATION, THE IMPROVEMENT IN SAID METHOD COMPRISING EMPLOYING AS SAID MONOCRYSTAL ONE WHOSE AREA OF CONTACT WITH THE PIECE OF MATERIAL IS NOT GREATER THAN ONE TENTH OF THE CROSS-SECTIONAL AREA OF THE LATTER.
Claim 2
Dependent Claim
131 words
IN A METHOD OF PRODUCING A SEMICONDUCTOR SINGLE CRYSTAL BY PROCESSING AN ELONGATED PIECE OF SEMICONDUCTOR MELTABLE MATERIAL BY CRUCIBLE-FREE FLOATING ZONE MELTING, THE METHOD COMPRISING SEEDING A LOCATION ON SAID MATERIAL WITH A MONOCRYSTAL OF SAID MATERIAL, AND COMPRISING SUPPORTING THE MATERIAL IN A VERTICAL POSITION, AND HEATING A CROSS-SECTIONAL ZONE OF SAID MATERIAL TO A TEMPERATURE HIGH ENOUGH TO LIQUEFY SAID MATERIAL, THE MOLTEN ZONE BEING SUFFICIENTLY SMALL SO THAT THE SURFACE TENSION OF THE MOLTEN MATERIAL RETAINS IT IN SAID ZONE, AND INCLUDING DISPLACING SAID ZONE-HEATING LONGITUDINALLY WITH RESPECT TO SAID MATERIAL TO SAID LOCATION, THE IMPROVEMENT IN SAID METHOD COMPRISING EMPLOYING AS SAID MONOCRYSTAL ONE WHOSE AREA OF CONTACT WITH THE PIECE OF MATERIAL IS NOT GREATER THAN ONE TENTH OF THE CROSS-SECTIONAL AREA OF THE LATTER.
References Cited (Backward Citations)
US2739088A
Cited
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GB775986A
Cited
US2972525A
Cited
US2930098A
Cited
US2961305A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-12-01 | 1968-06-01 | 1968-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-12-01 | 1972-06-01 | 1972-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-12-01 | 1976-06-01 | 1976-12-01 | $7700.00 | Window Closed / Lapsed |