Controllable reverse breakdown device

Claim 1

A CONTROLLED REVERSE BREAKDOWN DEVICE INCLUDING A BODY OF SEMICONDUCTOR MATERIAL HAVING A RECTIFYING JUNCTION DISPOSED AT A DEPTH OF LESS THAN 0.010 INCH FROM A SURFACE OF SAID BODY, REGIONS OF P AND N TYPE CONDUCTIVITY MATERIAL SEPARATED BY SAID JUNCTION, MEANS FOR PRODUCING A STRESS IN SAID JUNCTION, SAID MEANS FOR PRODUCING A STREE COMPRISING A STYLUS MEMBER BEARING ON SAID SURFACE OF SAID MATERIAL WITH A POINTED TIP HAIVNG A RADIUS OF CURVATURE OF LESS THAN ABOUT 250 MICRONS, ADJUSTMENT MEANS, MEANS CONNECTED WITH SAID STYLUS MEMEMBER FOR ADJUSTING THE PRESSURE OF SAID MEMBER UPON SAID SURFACE TO CONTROL THE MAGNITUDE OF THE STRESS IN SAID JUNCTION THEREBY PRE-SETTING THE REVERSE BREAKDOWN CHARACTERISTICS OF THE DEVICE, AND CIRCUIT MEANS CONNECTED TO SAID SEMICONDUCTOR BODY AND INCLUDING LOAD MEANS AND VOLTAGE SOURCE, SAID LOAD MEANS BEING REPSONSIVE TO VOLTAGE FROM SAID VOLTAGE SOURCE AND OF A VALVE DETERMINED BY SAID BREAKDOWN CHARACTERISTIC OF THE SEMICONDUCTOR BODY AS CONTROLLED BY SAID ADJUSTMENT MEANS.