Thermoelectric unit and process of using to interconvert heat and electrical energy

Claim 2

AS AN ARTICLE OF MANUFACTURE, A SHAPED BODY COMPRISING A MATRIX OF A SEMICONDUCTOR CHARACTRIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM-CM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER*C. TO 1000 MICROVOLTS PER *C., THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPRSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX, AND BEING SELECTED FROM THE GROUP CONSISTING OF SILICIDES OF THORIUM, ALUMINUM, GAGNESIUM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, VANADIUM, HAFNIUM, COLUMBIUM,TUNGSTEN, IRON, TIN, COBLAT, NICKEL, RHENIUM, MOLYBDENUM, BERYLLIUM, BARIUM, AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES.

Claim 3

PROCESS FOR CONVERTING HEAT INTO ELECTRICITY WHICH COMPRISES APPLYING HEAT TO A HOT JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS AND HOT JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM-CM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO ONE WATT/CM.*C. AND A SECBECK COEFFICIENT IN THE RANGE OF 50 MOCROVOLTS/*C. TO 1000 MICROVOLTS/*C., THE SAID MATRIX HAVING UNIFORMLY DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING PONT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX SELECTED FROM THE GROUP CONSISTING OF STABLE COMPOUNDS OF THE SILICIDES OF THORIUM, ALUMINUM, MAGNESIUM,CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN, COBALT, NICKEL, REHNIUM, MOLYDENUM,BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION, AND WITHDRAWING ELECTRICITY FROM SAID COLD JUNCTION.

Claim 4

PROCESS FOR CONVERTING HEAT INTO ELECTRICITY WHICH COMPRISES APPLYING HEAT TO A HOT JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS AND HOT JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM-CM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO ONE WATT/CM.*C. AND A SECBECK COEFFICIENT IN THE RANGE OF 50 MOCROVOLTS/*C. TO 1000 MICROVOLTS/*C., THE SAID MATRIX HAVING UNIFORMLY DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING PONT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX SELECTED FROM THE GROUP CONSISTING OF STABLE COMPOUNDS OF THE SILICIDES OF THORIUM, ALUMINUM, MAGNESIUM,CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN, COBALT, NICKEL, REHNIUM, MOLYDENUM,BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION, AND WITHDRAWING ELECTRICITY FROM SAID COLD JUNCTION.

Claim 5

THE PROCESS FOR CONVERTING ELECTRICITY INTO COOLING AND HEATING EFFECTS WHICH COMPRISES APPLYING ELECTRICITY TO A COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS, AND COLD JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION AND SAID LEGS AND A HOT JUNCTION FORMING A SECOND THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR SEGMENT CHARACTRIZED BY AN ELECTRICAL RESISTIVITY INTHE RANGE OF 1X10**4 OHM.-CM. TO 1X10**3 OHM-CM., WITH A THRMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER *C. TO 1000 MICROVOLTS PER *C., THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX AND BEING SELECTED FROM THE GROUP CONSISTING OF COMPOUNDS OF THE SILICIDES OF THORIUM, ALUMINUM, MAGNESIM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN COBALT, NICKEL, RHENIUM, MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, THEREBY COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION.

Claim 6

THE PROCESS FOR CONVERTING ELECTRICITY INTO COOLING AND HEATING EFFECTS WHICH COMPRISES APPLYING ELECTRICITY TO A COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS, AND COLD JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION AND SAID LEGS AND A HOT JUNCTION FORMING A SECOND THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR SEGMENT CHARACTRIZED BY AN ELECTRICAL RESISTIVITY INTHE RANGE OF 1X10**4 OHM.-CM. TO 1X10**3 OHM-CM., WITH A THRMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER *C. TO 1000 MICROVOLTS PER *C., THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX AND BEING SELECTED FROM THE GROUP CONSISTING OF COMPOUNDS OF THE SILICIDES OF THORIUM, ALUMINUM, MAGNESIM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN COBALT, NICKEL, RHENIUM, MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, THEREBY COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION.