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US3265542A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device and method for the fabrication thereof

Assignee: Lanteris Space LLC
•
Filing: 1962-03-15
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Granted: 1966-08-09
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Expires: 1982-03-15
📄 Original PDF 🌐 Google Patents

Abstract

No abstract record available.

Inventors

  • 👤 Jack M Hirshon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 12:15
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/017

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 88 words
A METHOD OF FORMING A RECTIFYING JUNCTION ON SILICON WHICH COMPRISES: FORMING ON A BODY OF SILICON AN ADHERENT LAYER OF AN INSULATING OXIDE OF SILICON EXTENDING OVER A PART ONLY OF SAID BODY SO THAT A PORTION OF SAID BODY IS EXPOSED; AND EPITAXIALLY GROWING ONTO SAID EXPOSED PORTION, AND CONTIGUOUS TO THE EDGE OF SAID OXIDE LAYER, SILICON OF CONDUCTIVITY SUITABLE FOR PRODUCING A RECTIFYING JUNCTION WITH THE UNDERLYING SILICON BODY, WHILE RETAINING SAID OXIDE LAYER DURING AND AFTER THE EPITAXIAL-GROWTH FORMATION OF THE RECTIFYING JUNCTION.
Claim 2
Independent Claim 88 words
A METHOD OF FORMING A RECTIFYING JUNCTION ON SILICON WHICH COMPRISES: FORMING ON A BODY OF SILICON AN ADHERENT LAYER OF AN INSULATING OXIDE OF SILICON EXTENDING OVER A PART ONLY OF SAID BODY SO THAT A PORTION OF SAID BODY IS EXPOSED; AND EPITAXIALLY GROWING ONTO SAID EXPOSED PORTION, AND CONTIGUOUS TO THE EDGE OF SAID OXIDE LAYER, SILICON OF CONDUCTIVITY SUITABLE FOR PRODUCING A RECTIFYING JUNCTION WITH THE UNDERLYING SILICON BODY, WHILE RETAINING SAID OXIDE LAYER DURING AND AFTER THE EPITAXIAL-GROWTH FORMATION OF THE RECTIFYING JUNCTION.

References Cited (Backward Citations)

US2895858A Cited
US2858489A Cited
US3025589A Cited
US2989424A Cited
US2981877A Cited
US3114663A Cited
US3098774A Cited
US3156591A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-08-08 1970-02-07 1970-08-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-08-08 1974-02-07 1974-08-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-08-08 1978-02-07 1978-08-09 $7700.00 Window Closed / Lapsed

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