Silicon rectifying junction structures for electric power and process of production thereof

Claim 1

A HIGH CAPACITY SILICONN RETIFYING DEVICE FOR POWER USE COMPRISED OF A BASIC CIRCULAR INTRINSIC MONOCRYSTALLINE SILICON WAFER, A DOFFUSED IMPURITY REGION OF ONE CONDUCTIVITY, THE RADIUS OF WHICH IS SMALLER THAN THAT OF SAID WAFER BY AN AMOUNT CORRESPONDING TO THE THICKNESS OF SAID WAFER, ADJACENT TO AND CONCENTRIC WITH SAID NTRINSIC REGION ON ONE SIDE OF SAID WAFER, ANOTHER DIFFUSE IMPURITY REGION OF OPPOSITE CONDUCTIVITY ADJACENT TO AND COEXTENSIVE WITH SAID INTRINSIC REGION DISPOSED ON THE OPPOSITE SIDE INTRINSIC REGION DISPOSED ON THE WAFER IS UNIFORM AND IS SMALLER THAN ITTS RADIUS, THEDEPTH OF SAID IMPURITY REGIONS BEING SUBSTANTIALLY 1/3 OR LESS OF THE INTRINSIC REGION, AND CONDUCTIVE CONTACT MEANS TO SAID DIFFERENT IMPURITY REGIONS.