US3270258A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor
Assignee: Infineon Technologies Americas Corp
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Filing: 1963-07-05
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Granted: 1966-08-30
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Expires: 1983-07-05
Abstract
No abstract record available.
Inventors
- 👤 John M Gault
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:41
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/80
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
49 words
A FIELD EFFECT TRANSISTOR COMPRISNG A WAFER OF N TYPE CONDUCTIVITY SEMICONDUCTOR MATERIAL HAVING A FIRST AND SECOND SPACED P+ CONDUCTIVITY REGION EXTENDING INTO ONE SURFACE THEREOF, AND A P TYPE CONDUCTIVITY REGION EXTENDING INTO SAID ONE SURFACE THEROF AND BEING INTERPOSED BETWEEN SAID FIRST AND SECOND P+ REGIONS.
Claim 2
Dependent Claim
49 words
A FIELD EFFECT TRANSISTOR COMPRISNG A WAFER OF N TYPE CONDUCTIVITY SEMICONDUCTOR MATERIAL HAVING A FIRST AND SECOND SPACED P+ CONDUCTIVITY REGION EXTENDING INTO ONE SURFACE THEREOF, AND A P TYPE CONDUCTIVITY REGION EXTENDING INTO SAID ONE SURFACE THEROF AND BEING INTERPOSED BETWEEN SAID FIRST AND SECOND P+ REGIONS.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-29 | 1970-02-28 | 1970-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-29 | 1974-02-28 | 1974-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-29 | 1978-02-28 | 1978-08-30 | $7700.00 | Window Closed / Lapsed |