US3297501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for epitaxial growth of semiconductor single crystals
Assignee: International Business Machines Corp
•
Filing: 1963-12-31
•
Granted: 1967-01-10
•
Expires: 1983-12-31
Abstract
No abstract record available.
Inventors
- 👤 Reisman Arnold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:17
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C01; C01B; C01B33/00; C01B33/02; C22; C22B; C22B41/00; C30B25/00; C30B25/02; C30B29/08
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
47 words
A METHOD OF EPITAXIALLY DEPOSITING A SEMICONDUCTOR ON A SUBSTRATE COMPRISING THE STEPS OF PROVIDING A BED OF SAID SEMICONDUCTOR MATERIAL, GENERATING A NON-ETCHING SEMICONDUCTOR POLYHALIDE VAPOR WHICH IS IN EQUILIBRIUM WITH SAID SEMICONDUCTOR MATERIAL AND REDUCING SAID POLYHALIDE VAPOR TO CAUSE EPITAXIAL DEPOSITION ON SAID SUBSTRATE.
Claim 2
Independent Claim
47 words
A METHOD OF EPITAXIALLY DEPOSITING A SEMICONDUCTOR ON A SUBSTRATE COMPRISING THE STEPS OF PROVIDING A BED OF SAID SEMICONDUCTOR MATERIAL, GENERATING A NON-ETCHING SEMICONDUCTOR POLYHALIDE VAPOR WHICH IS IN EQUILIBRIUM WITH SAID SEMICONDUCTOR MATERIAL AND REDUCING SAID POLYHALIDE VAPOR TO CAUSE EPITAXIAL DEPOSITION ON SAID SUBSTRATE.
References Cited (Backward Citations)
US2692839A
Cited
US2767052A
Cited
US2763581A
Cited
GB855913A
Cited
US3020129A
Cited
US3068066A
Cited
US3009834A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-01-09 | 1970-07-11 | 1971-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-01-09 | 1974-07-11 | 1975-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-01-09 | 1978-07-11 | 1979-01-10 | $7700.00 | Window Closed / Lapsed |