US3303069A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: Hitachi Ltd
•
Filing: 1964-02-03
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Granted: 1967-02-07
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Expires: 1984-02-03
Abstract
No abstract record available.
Inventors
- 👤 Toknyama Takashi
- 👤 Uehara Keijiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
202 words
IN THE METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SURFACE STABILIZED BY DEPOSITING ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE A FILM OF SILICON DIOXIDE BY THE PYROLYTIC DECOMPOSITON OF AN ORGANO-OXYSILANE, THE STEPS OF PLACING SAID SEMICONDUCTOR DEVICE IN A FIRST TEMPERATURE REGION OF A FURNACE HAVING TWO TEMPERATURE REGIONS, THE SAID FIRST REGION HAVING A TEMPERATURE OF SUBSTANTIALLY 700*C. TO EFFECT SAID PYROLYTIC DECOMPOSITION OF SAID ORGANO-OXY-SILANE TO FORM SAID FILM OF SILICON DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE, PLACING A SUBSTANCE WHICH SERVES AS AN ACCEPTOR FOR SAID SEMICONDUCTOR MATERIA IN THE SECOND TEMPERATURE REGION OF THE FURNACE, AND HEATING SAID SECOND REGION TO AT TEMPERATURE TO CONTROL THE VAPOR PRESURE OF SAID ACCEPTOR ON THE SURFACE AND DEPOSTION OF SAID FILM OF SILICON DIOXIDE ON THE SURFACE AND DEPOSTION OF SAID FILM OF SILICON DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR SURFACE BY THE PYROLYTIC DECOMPOSITION OF SAID ORGANO-OXYSILANE WHILE, AT THE SAME TIME, TO INTRODUCE BY DIFFUSION OF SAID ACCEPTOR SUBSTANCE INTO THE SURFACE OF SAID SEMICONDUCTOR DEVICE, THEREBY COMPENSATING FOR THE EFFECT OF THE DONOR TYPE SURFACE STATES OF THE SURFACE OF SAID SEMICONDUCTOR MATERIAL.
Claim 2
Dependent Claim
202 words
IN THE METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SURFACE STABILIZED BY DEPOSITING ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE A FILM OF SILICON DIOXIDE BY THE PYROLYTIC DECOMPOSITON OF AN ORGANO-OXYSILANE, THE STEPS OF PLACING SAID SEMICONDUCTOR DEVICE IN A FIRST TEMPERATURE REGION OF A FURNACE HAVING TWO TEMPERATURE REGIONS, THE SAID FIRST REGION HAVING A TEMPERATURE OF SUBSTANTIALLY 700*C. TO EFFECT SAID PYROLYTIC DECOMPOSITION OF SAID ORGANO-OXY-SILANE TO FORM SAID FILM OF SILICON DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR DEVICE, PLACING A SUBSTANCE WHICH SERVES AS AN ACCEPTOR FOR SAID SEMICONDUCTOR MATERIA IN THE SECOND TEMPERATURE REGION OF THE FURNACE, AND HEATING SAID SECOND REGION TO AT TEMPERATURE TO CONTROL THE VAPOR PRESURE OF SAID ACCEPTOR ON THE SURFACE AND DEPOSTION OF SAID FILM OF SILICON DIOXIDE ON THE SURFACE AND DEPOSTION OF SAID FILM OF SILICON DIOXIDE ON THE SURFACE OF SAID SEMICONDUCTOR SURFACE BY THE PYROLYTIC DECOMPOSITION OF SAID ORGANO-OXYSILANE WHILE, AT THE SAME TIME, TO INTRODUCE BY DIFFUSION OF SAID ACCEPTOR SUBSTANCE INTO THE SURFACE OF SAID SEMICONDUCTOR DEVICE, THEREBY COMPENSATING FOR THE EFFECT OF THE DONOR TYPE SURFACE STATES OF THE SURFACE OF SAID SEMICONDUCTOR MATERIAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-06 | 1970-08-08 | 1971-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-06 | 1974-08-08 | 1975-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-06 | 1978-08-08 | 1979-02-07 | $7700.00 | Window Closed / Lapsed |