Hall device with improved zero voltage temperature characteristic

Claim 1

A HALL DEVICE HAVING A ZERO VOLTAGE TEMPERATURE CHARACTERISTIC AND A ZERO VOLTAGE NON-LINEAR DISTORTION FACTOR KON, SAID HALL DEVICE COMPRISING AN ACTIVE SEMICONDUCTOR BODY HAVING A SUBSTANTIALLY UNIFORM THICKNESS, A LENGTH, A WIDTH, LENGTH SIDES, SPACED OPPOSITE ENDS OF SAID LENGTH SIDES AND CONTROL ELECTRODES AT SAID SPACED OPPOSITE ENDS FOR PROVIDING A SUBSTANTIALLY SINUSOIDAL CONTROL CURRENT FLOW BETWEEN SAID CONTROL ELECTRODES, SAID CONTROL CURRENT HAVING A NON-LINEAR DISTORTION FACTOR KN<10-3, SAID SEMICONDUCTOR BODY COMPRISING SEMICONDUCTOR MATERIAL HAVING A SPECIFIC RESISTANCE TEMPERATURE CHARACTERISTIC; A PAIR OF HALL ELECTRODES EXTENDING IN OPPOSITE DIRECTIONS AWAY FROM THE CENTRAL PORTION OF THE LENGTH SIDES OF SAID SEMICONDUCTOR BODY, SAID HALL ELECTRODES COMPRISING THE SAME SEMICONDUCTOR MATERIAL AS SAID SEMICONDUCTOR BODY, EACH OF SAID HALL ELECTRODES HAVING A WIDTH AND A LENGTH WHICH IS AT LEAST TWICE ITS WIDTH SO THAT EACH OF SAID HALL ELECTRODES EXTENDS FROM SAID SEMICONDUCTOR BODY TO POINTS WHICH ARE BEYOND THE SPHERE OF INFLUENCE OF THE CONTROL CURRENT FLOWING IN SAID SEMICONDUCTOR BODY AND THE ENDS OF SAID HALL ELECTRODES FARTHEST FROM SAID SEMICONDUCTOR BODY ARE BEYOND SAID SPHERE OF INFLUENCE, AND EACH OF SAID HALL ELECTRODES HAVING A PORTION OF