Method for producing semiconductor devices

Claim 1

PROCESS OF GROWING EPITAXIAL LAYERS OF SEMICONDUCTOR MATERIAL ON A MONOCRYSTALLINE SEMICONDUCTOR BODY, WHICH COMPRISES PERFORMING IN A REACTION VESSEL THE STEPS OF HEATING A STRUCTURE OF CARBON HAVING A TOP FLAT SURFACE TO A TEMPERATURE OF ABOUT 1300*C. IN THE PRESENCE OF A GASEOUS COMPOUND OF SILICON SELECTED FROM THE GROUP CONSISTING OF A HALOGEN AND HYDROGEN COMPOUND OF SILICON AND AN ORGANOSILICON COMPOUND SO THAT THE GASEOUS COMPOUND REACTS WITH THE CARBON TO FORM A DENSE LAYER OF SILICON CARBIDE ON THE SURFACE; PLACING THE SEMICONDUCTOR BODY ON THE SILICON CARBIDE-COATED SURFACE, HEATING THE SEMICONDUCTOR BODY TO A TEMPERATURE AT WHICH A GIVEN GASEOUS COMPOUND OF THE SEMICONDUCTOR MATERIAL IS PYROLYTICALLY DECOMPOSED BY HEAT CONDUCTION FROM THE COATED STRUCTURE, CONTACTING THE HEATED SEMICONDUCTOR BODY WITH THE GIVEN GASEOUS COMPOUND MIXED WITH A CARRIER GAS AND HEATING THE GASEOUS COMPOUND TO THE TEMPERATURE AT WHICH IT IS PYROLYTICALLY DECOMPOSED SO THAT A LAYER OF THE SEMICONDUCTOR MATERIAL IS EPITAXIALLY GROWN ON THE SEMICONDUCTOR BODY, REMOVING THE EPITAXIALLY COATED SEMICONDUCTOR BODY FROM THE STRUCTURE, AND CLEANSING THE SILICON CARBIDE-COATED SURFACE OF THE STRUCTURE FROM THE SEMICONDUCTOR MATERIAL DEPOSITED THEREON PREPARATORY TO PLACING ANOTHER SEMICONDUCTOR BODY THEREON AND REPEATING THE STEP WHEREBY A LAYER OF SEMICONDUCTOR MATERIAL IS EPITAXIALLY GROWN ON THE SEMICONDUCTOR BODY.