← Back to Patent Explorer
US3341361A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for providing a silicon sheet

Assignee: Union Carbide Corp
•
Filing: 1963-02-21
•
Granted: 1967-09-12
•
Expires: 1983-02-21
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Daniel A Gorski

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 10:49
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/30; C; C30; C30B; C30B15/00; C30B15/007; H; H10; H10P; H10P10/00; H10P10/12; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; Y; Y10; Y10S; Y10S148/00; Y10S148/054; Y10S148/073; Y10S148/107; Y10S148/122; Y10S148/15; Y10S148/152

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 111 words
A PROCESS FOR PRODUCING A SILICON SHEET OF RELATIVELY LARGE SILICON CRYSTALS BONDED TO A SILICON NITRIDE SUBSTRATE, WHICH PROCESS COMPRISES: (A) PROVIDING SAID SILICON NITRIDE SUBSTRATE WITH A SURFACE THAT IS SUFFICIENTLY SMOOTH THAT MOLTEN SILICON IS NON-ADHERENT THERETO; (B) PROVIDING THE SMOOTH SURFACE OF SAID SUBSTRATE WITH AT LEAST ONE NUCLEATING SITE; (C) CONTACTING THE SMOOTH SURFACE OF SAID SUBSTRATE AND SAID NUCLEATING SITE THEREON WITH MOLTEN SILICON SO AS TO PROPAGATE A MOLTEN SILICON SHEET FROM SAID NUCLEATING SITE OVER AND IN CONTACT WITH THE SMOOTH SURFACE OF SAID SUBSTRATE; (D) AND BONDING SAID SILICON SHEET TO SAID SMOOTH SURFACE OF SAID SUBSTRATE BY FREEZING SAID SHEET THEREON.
Claim 2
Dependent Claim 111 words
A PROCESS FOR PRODUCING A SILICON SHEET OF RELATIVELY LARGE SILICON CRYSTALS BONDED TO A SILICON NITRIDE SUBSTRATE, WHICH PROCESS COMPRISES: (A) PROVIDING SAID SILICON NITRIDE SUBSTRATE WITH A SURFACE THAT IS SUFFICIENTLY SMOOTH THAT MOLTEN SILICON IS NON-ADHERENT THERETO; (B) PROVIDING THE SMOOTH SURFACE OF SAID SUBSTRATE WITH AT LEAST ONE NUCLEATING SITE; (C) CONTACTING THE SMOOTH SURFACE OF SAID SUBSTRATE AND SAID NUCLEATING SITE THEREON WITH MOLTEN SILICON SO AS TO PROPAGATE A MOLTEN SILICON SHEET FROM SAID NUCLEATING SITE OVER AND IN CONTACT WITH THE SMOOTH SURFACE OF SAID SUBSTRATE; (D) AND BONDING SAID SILICON SHEET TO SAID SMOOTH SURFACE OF SAID SUBSTRATE BY FREEZING SAID SHEET THEREON.

References Cited (Backward Citations)

CA562066A Cited
US2823102A Cited
US3129061A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1970-09-11 1971-03-13 1971-09-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1974-09-11 1975-03-13 1975-09-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1978-09-11 1979-03-13 1979-09-12 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag