Planar injection laser structure

Claim 1

A PROCESS OF PRODUCING AN INJECTION LASER DEVICE COMPRISING THE STEPS OF: PROVIDING A SEMICONDUCTOR WAFER OF ONE CONDUCTIVITY TYPE, CLEAVING SAID WAFER IN A PLANE OF MINIMUM BOND STRENGTH TO ESTABLISH A REFERENCE PLANE, SELECTIVELY DEPOSITING A MASKING MATERIAL UPON A MAJOR SURFACE OF SAID SEMICONDUCTOR WAFER TO DEFINE A PLURALITY OF DISCRETE ZONES OF SAID SURFACE EXTENDING PERPENDICULARLY FROM SAID REFERENCE PLANE WHERE DIFFUSION MAY TAKE PLACE, FIFFUSING A QUANTITY OF A SELECTED IMPURITY VAPOR THROUGH THE DISCRETE ZONES INTO THE SURFACE OF SAID WAFER TO CREATE A PLURALITY OF OPPOSITE CONDUCTIVITY TYPE REGIONS, EACH IN THE SHAPE OF A PARALLELEPIPED, CUTTING ALONG PLANES PARALLEL TO THE MAJOR AXES OF SAID PRARLLELEPIPEDS TO PRODUCE INDIVIDUAL SECTIONS, AND CLEAVING SAID SECTIONS AT SELECTED DISTANCES IN PLANES PARALLEL TO SAID REFERENCE PLANES TO PRODUCE DISCRETE DEVICES.