US3350775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of making solar cells or the like
Assignee: Hoffman Electronics Corp
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Filing: 1963-10-03
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Granted: 1967-11-07
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Expires: 1983-10-03
Abstract
No abstract record available.
Inventors
- 👤 Iles Peter Albert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:25
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F71/00; H10F71/133; H10F99/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/12
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
147 words
A PROCESS OF FORMING A PHOTOVOLTAIC DEVICE, COMPRISING: FORMING AN OXIDE LAYER ON ALL SURFACES OF A BLANK OF SEMI-CONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, REMOVING THE OXIDE LAYER FROM THE TOP, ONE END AND A MINOR PORTION OF THE BOTTOM OF SAID BLANK TO FORM AN EXPOSED AREA, DIFFUSING AN IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE INTO SAID EXPOSED AREA TO FORM A JUNCTION IN SAID BLANK, MASKING A STRIP OF THE REMAINING OXIDE LAYER ADJACENT SAID DIFFUSED AREA AND OVERLYING THE AREA WHERE SAID JUNCTION COMES TO THE SURFACE OF SAID BLANK REMOVING THE OXIDE LAYER FROM THE REMAINDER OF THE BOTTOM OF SAID BLANK TO FORM AN EXPOSED AREA, AND PLATING METALLIC CONTACTS ON THE DIFFUSED END AND BOTTOM AREAS OF SAID BLANK AND ON SAID EXPOSED AREA, SAID CONTACTS BEING SEPARATED AND PREVENTED FROM SHORTING SAID JUNCTION BY THE REMAINING OXIDE STRIP.
Claim 2
Dependent Claim
147 words
A PROCESS OF FORMING A PHOTOVOLTAIC DEVICE, COMPRISING: FORMING AN OXIDE LAYER ON ALL SURFACES OF A BLANK OF SEMI-CONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, REMOVING THE OXIDE LAYER FROM THE TOP, ONE END AND A MINOR PORTION OF THE BOTTOM OF SAID BLANK TO FORM AN EXPOSED AREA, DIFFUSING AN IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE INTO SAID EXPOSED AREA TO FORM A JUNCTION IN SAID BLANK, MASKING A STRIP OF THE REMAINING OXIDE LAYER ADJACENT SAID DIFFUSED AREA AND OVERLYING THE AREA WHERE SAID JUNCTION COMES TO THE SURFACE OF SAID BLANK REMOVING THE OXIDE LAYER FROM THE REMAINDER OF THE BOTTOM OF SAID BLANK TO FORM AN EXPOSED AREA, AND PLATING METALLIC CONTACTS ON THE DIFFUSED END AND BOTTOM AREAS OF SAID BLANK AND ON SAID EXPOSED AREA, SAID CONTACTS BEING SEPARATED AND PREVENTED FROM SHORTING SAID JUNCTION BY THE REMAINING OXIDE STRIP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-11-06 | 1971-05-08 | 1971-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-11-06 | 1975-05-08 | 1975-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-11-06 | 1979-05-08 | 1979-11-07 | $7700.00 | Window Closed / Lapsed |