Field effect solid state image pickup and storage device

Claim 1

AN INFORMATION STORAGE DEVICE COMPRISING; (A) AN ARRAY OF ELECTRICAL CONDUCTORS COMPRISING A PLURALITY OF INDIVIDUAL CONDUCTORS HAVING A GAP IN ELECTRICAL CONTINUITY BETWEEN EACH CONDUCTOR AND EVERY OTHER CONDUCTOR OF THE ARRAY, (B) A PHOTOCONDUCTIVE FIELD-EFFECT SEMICONDUCTOR ELEMENT IN INTIMATE CONTACT WITH EACH OF SAID INDIVIDUAL CONDUCTORS IN SAID ARRAY AT THE GAP IN CONTINUITY BETWEEN SAID CONDUCTOR AND ANOTHER OF SAID CONDUCTORS, WITH EACH OF SAID CONDUCTORS BEING SEPARATED FROM ANOTHER CONDUCTOR BY AT LEAST A PORTION OF SAID SEMICONDUCTOR, SAID ELEMENT HAVING AN EXPOSED SURFACE SUITABLE FOR THE DEPOSITION AND RETENTION OF ELECTROSTATIC CHARGE THEREON, (C) MEANS TO FORM A CHARGE PATTERN ON SAID EXPOSED SURFACE OF SAID FIELD-EFFECT SEMICONDUCTOR ELEMENT CORRESPONDING TO AN ELECTROMAGNETIC RADIATION INPUT PATTERN, WHEREBY THE ELECTRICAL CONDUCTIVITY OF SAID SEMICONDUCTOR ELEMENT IS ALTERED IN CORRESPONDANCE TO SAID CHARGE PATTERN, (D) MEANS TO SEQUENTIALY APPLY A VOLTAGE AT EACH OF SAID CONTINUITY GAPS IN SAID ARRAY WHICH IS FILLED BY SAID FIELD-EFFECT SEMICONDUCTOR ELEMENT, AND (E) MEANS TO DETECT CHANGES IN THE INSTANTANEOUS CONDUCTIVITY OF SAID FIELD-EFFECT SEMICONDUCTOR ELEMENT AT EACH OF SAID GAPS.