US3560364A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for preparing thin unsupported films of silicon nitride
Assignee: International Business Machines Corp
•
Filing: 1968-10-10
•
Granted: 1971-02-02
•
Expires: 1988-10-10
Abstract
Abstract A METHOD IS PROVIDED FOR PRODUCTING EXTREMELY THIN, FREE-STANDING OR UNSUPPORTED FILMS OF SILICON NITRIDE, HAVING THE FORMULA SI3N4. THE METHOD INCLUDES THE INITIAL STEP OF SPUTTERED DEPOSITING ON A MOLYBDENUM SUBSTRATE, A THIN LAYER OF SILICON NITRIDE. THE ASSEMBLY IS THEN LOCATED IN AN OVEN, HEATED TO A TEMPERATURE RANGING FROM 500*C. TO 900*C., AND CHLORINE GAS INTRODUCED INTO THE OVEN. IN THIS MANNER, GASEOUS DISSOLUTION OF THE SUBSTRATE IS EFFECTED, RESULTING IN THE PRODUCTION OF THE FREE-STANDING FILM OF SILICON NITRIDE.
Inventors
- 👤 Paul J Burkhardt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:00
CPC Classifications
C; C23; C23F; C23F1/00; C23C; C23C14/00; C23C14/0005; H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/085
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-01 | 1974-08-03 | 1975-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-01 | 1978-08-03 | 1979-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-01 | 1982-08-03 | 1983-02-02 | $7700.00 | Window Closed / Lapsed |