Dielectric capacitors with inner barrier layers and low temperature dependence

Claim 1

The dielectric capacitor as defined in claim 1 wherein the first doping substance is a material selected from the group consisting essentially of Bi, Ce, La, Nb, Nd, Sb, Sm and Ta and the second doping substance is a material selected from the group consisting essentially of Cu, Fe, and Mn.

Claim 10

The method of producing a dielectric capacitor body comprising: (1) forming a barium-titanate crystallite having a perovskite structure of the formula: (Ba1 xMII)O.z(Ti1 yMIV(O2 wherein MII is selected from the group consisting essentially of Ca, Sr, Pb, Mg and mixtures thereof; MIV is selected from the group consisting essentially of Zr, Sn and mixtures thereof; x and y are numerals ranging up to one, and z is a numeral ranging from 1.005 to 1.05; (2) admixing at least a first and a second doping substance to said crystallites to achieve a substantially uniform intimate mixture thereof, said first doping substance predominantly producing N-conductivity in the inside of the crystallites, said second doping substance predominantly producing P-conductivity in the surface layers of said crystallites; (3) heating said mixture to a temperature in the range of 950* C. to 1100 * C. to achieve a solid-state body reaction thereof; (4) uniformly pulverizing the reacted mixture; (5) mixing an organic binder with such pulverized mixture; and (6) forming a capacitor body thereof and subjecting said body to sintering conditions at temperatures in the range of 1300* C. to 1400* C. for a period of time ranging from about 30 to 150 minutes.