Abstract A nondestructive read integrated circuit memory having a twodimensional array of insulated-gate field-effect transistor cells. Each cell consists of three transistors, an input isolation transistor, an output isolation transistor and a storage transistor. The cells in the array are interconnected along one dimension by bit sense lines and along a second dimension by Phi 1 and Phi 2 control lines. Only the cells which are selected by the control lines are operative during a read or write cycle, and the remaining cells are isolated from the active cells by means of the unactivated input and output isolation transistors. The input isolation transistor, when activated during a write cycle controls the placement of a charge which represents storage information across the gate to substrate capacitance of the storage transistor. The output isolation transistor, when activated during a read cycle controls the sensing of information stored at the storage transistor.
The integrated circuit as defined in claim 1 wherein said first and second control means are signal lines connected to said second and third gate regions respectively so as to apply a potential signal capable of switching said second and third insulated gate field effect transistors to a conducting state.
Claim 2
Dependent Claim
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The integrated circuit as defined in claim 2 wherein a portion of said bit sense line is a diffused semiconductive material that forms said second and third drain regions.
Claim 3
Dependent Claim
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The integrated circuit as defined in claim 3 wherein a portion of said ground line is a diffused semiconductive material which forms said first source region.
Claim 4
Dependent Claim
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The integrated circuit as defined in claim 4 wherein the ohmic connection in said cell forms an electrical contact between said first gate region and said third source region; said first gate region being a metal and said third source region being a diffused semiconductive material.
Claim 5
Dependent Claim
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The integrated circuit as defined in claim 5 wherein said first, second and third gate regions are insulated from said first, second and third source and drain regions by means of a thin insulating oxide layer.
Claim 6
Dependent Claim
209 words
A nondestructive read storage device capable of maintaining a signal representative of stored digital information comprising: a body of semiconductive material of a first type of semiconductivity; a plurality of cells arranged in a two-dimensional array within said body of semiconductive material; all of the cells in a row of a first dimension being commonly joined by a first and second diffused regions of semiconductive material of a second type of semiconductivity; a portion of said first diffused region forming a ground line and said second diffused region forming a bit sense line; a third and fourth diffused regions of semiconductive material of a second type of semiconductivity extending into a portion of said body of semiconductive material; a first region of insulating material completely overlying said diffused regions; a first and second control line formed by a metal layer overlying said insulating region so as to form three insulated-gate field effect transistors within each cell; said transistors being formed so as to have an ohmic connection within the cell between said fourth diffused region and a metal gate region between said first and second control lines; whereby said three insulated-gate field-effect transistors in each cell may accept, maintain and output electrical signal information via said second diffused region.