US3592705A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor device
Assignee: Sony Corp
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Filing: 1969-05-02
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Granted: 1971-07-13
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Expires: 1989-05-02
Abstract
Abstract THIS INVENTION RELATES GENERALLY TO SEMICONDUCTOR DEVICES, AND MORE PARTICULARLY TO A DIFFUSION-TYPE TRANSISTOR AND A METHOD OF MAKING THE SAME. INSTEAD OF USING A PHOTOSENSITIVE MATERIAL TO COAT THE SEMICONDUCTOR SUBSTRATE THE MARK IS FORMED OF AN ETCHANT-PROOF MATERIAL, SUCH AS WAX. THE N+ AND P+ IMPURITIES ARE ALSO SIMULTANEOUSLY DIFFUSED.
Inventors
- 👤 Tsuneo Kawashima
- 👤 Kenji Ohmori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:52
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10D; H10D99/00; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/106
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-12 | 1975-01-11 | 1975-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-12 | 1979-01-11 | 1979-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-12 | 1983-01-11 | 1983-07-13 | $7700.00 | Window Closed / Lapsed |