US3595715A
Expired / Lapsed
US
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Method of manufacturing a semiconductor device comprising a junction field-effect transistor
Assignee: US Philips Corp
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Filing: 1968-07-01
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Granted: 1971-07-27
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Expires: 1988-07-01
Abstract
Abstract A METHOD IS DESCRIBED FOR MAKING A JUNCTION FIELD EFFECT TRANSISTOR USING TWO OPPOSITE-TYPE BURIED LAYERS IN A SUBSTRATE, AND A SINGLE EPITAXIAL LAYER. THE TOP BURIED LAYER FORMS WITH A REGION DIFFUSED FROM THE SURFACE A CUPSHAPED VOLUME CONSTITUTING A CONTROL ELECTRODE. THE CHANNEL, OF EPITAXIAL MATERIAL, IS DEFINED BY A SURFACE DIFFUSION WITHIN THE CUP. THE BOTTOM BURIED LAYER ISOLATES THE TRANSISTOR FROM THE SUBSTRATE.
Inventors
- 👤 Jacques Thire
- 👤 Rene Glaise
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:11
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/60; H10D84/67; H10D84/673; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/053; Y10S148/085; Y10S148/145; Y10S148/151
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-07-26 | 1975-01-25 | 1975-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-07-26 | 1979-01-25 | 1979-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-07-26 | 1983-01-25 | 1983-07-27 | $7700.00 | Window Closed / Lapsed |