Process for forming electrically stable doped epitaxial layers
Abstract
Abstract A PROCESS WHICH STABILIZES THE RESISTIVITY OF AN EPITAXIALLY GROWN LAYER OF GERMANIUM DOPED WITH P-TYPE IMPURITIES AND DEPOSITED IN A LOW TEMPERATURE OPEN TUBE DISPROPORTIONATION SYSTEM FROM A GERMANIUM HALIDE SPECIE UNDER SURFACE LIMITED CONDITION IS DISCLOSED. WHEN P-TYPE DOPANTS ARE DEPOSITED ALONG WITH GERMANIUM IN A SURFACE LIMITED NODE, HEATING SUBSEQUENT TO DEPOSITION TO HIGHER TEMPERATURES THAN THE DEPOSITION TEMPERATURE BROUGHT ABOUT CHANGES IN RESISTIVITY RESULTING IN INOPERABLE DEVICES OR DEVICES HAVING POOR CHARACTERISTICS. THE RESISTIVITY CHANGES CAN BE OVERCOME BY A PLOST-DEPOSITION ANNEAL ALONE OR BY ADJUSTING DEPOSITION PARAMETERS, SUCH AS GROWTH RATE AND SUBSTRATE TEMPERATURE IN CONJUNCTION WITH ANNEALING.
Inventors
- 👤 Melvin Berkenblit
- 👤 Arnold Reisman
- 👤 Thomas B Light
Bibliographic Details
Claims Analysis
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