US3607699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Technique for the deposition of gallium phosphide resistive films by cathodic sputtering
Assignee: AT&T Inc
•
Filing: 1969-08-08
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Granted: 1971-09-21
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Expires: 1989-08-08
Abstract
Abstract Gallium phosphide thin films manifesting resistivities within the rage of 10 to 106 ohm-centimeters are obtained by cathodic sputtering of gallium phosphide at controlled temperatures and deposition rates. The resistivity of the sputtered films may increased to 108 ohm-centimeters by annealing at elevated temperatures.
Inventors
- 👤 Jacob Sosniak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:30
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/119; Y10S148/122; Y10S148/169
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
19 words
Technique in accordance with claim 1 wherein the thickness of said deposited film ranges from 2500 to 80,000 angstroms.
Claim 2
Dependent Claim
16 words
Technique in accordance with claim 1 wherein said gallium phosphide film is doped with an impurity.
Claim 3
Dependent Claim
21 words
Technique is accordance with claim 1 wherein said gallium phosphide is deposited at a rate of approximately 260 angstroms per minute.
Claim 4
Dependent Claim
18 words
Technique in accordance with claim 4 wherein said deposited film is annealed at a temperature of 600* C.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-20 | 1975-03-22 | 1975-09-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-20 | 1979-03-22 | 1979-09-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-20 | 1983-03-22 | 1983-09-21 | $7700.00 | Window Closed / Lapsed |