US3609470A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
Assignee: International Business Machines Corp
•
Filing: 1968-02-19
•
Granted: 1971-09-28
•
Expires: 1988-02-19
Abstract
Abstract This is a semiconductor device provided with an electrode which contains a small percentage of the semiconductor material with the remainder of the electrode being metal.
Inventors
- 👤 Lubertus L Kuiper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
84 words
A silicon sEmiconductor device having an ohmic contact electrode thereon, said electrode being a prepassivated alloy of aluminum and silicon having a plurality of planar regions which are connected by necklike portions of said electrodes, where at least one of said regions contacts said silicon semiconductor device, said regions being thin films of thickness at least about 5,000 A, said electrode consisting essentially of uniformly distributed silicon in an amount of 2-3 percent by weight of said electrode and 97-98 percent aluminum by weight.
Claim 2
Dependent Claim
71 words
A semiconductor device having a conductor line thereat, said device having an improved ohmic contact comprising: a thin electrode located between said conductor line and said semiconductor device, said electrode being a prepassivated homogeneous alloy of aluminum and silicon having a portion extending to ohmically contact said device and consisting essentially of 2-3 percent by weight silicon and 97-98 percent by weight aluminum, said silicon being uniformly distributed in said electrode.
Claim 3
Dependent Claim
66 words
A semiconductor substrate containing devices and having an insulative coating thereon, said substrate having electrodes located on said coating which have necklike portions extending through said coating to ohmically contact said semiconductor devices, said electrodes being thin film homogeneous alloys of aluminum and silicon consisting essentially of 2-3 percent silicon by weight and 97-98 percent aluminum by weight, said silicon being uniformly distributed in said film.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-27 | 1975-03-29 | 1975-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-27 | 1979-03-29 | 1979-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-27 | 1983-03-29 | 1983-09-28 | $7700.00 | Window Closed / Lapsed |