Deposition of doped and undoped silica films on semiconductor surfaces
Abstract
Abstract Deposition of a silica film on a semiconductor surface is effected by applying, on the surface, a thin film of a solution of silicon acetate in an inert solvent, and heating the coated surface at a temperature and for a period of time adequate to decompose the acetate to a glassy silica film. Such a silicon acetate solution may contain a soluble dopant which, upon evaporation of the solvent and heating to diffusion temperature, will enable the dopant to diffuse into any exposed semiconductor surfaces. The silicon acetate used in this invention may be one of the compounds having the following general formula: IN WHICH R is a substituent of the class consisting of an acetate or a vinyl group.
Inventors
- 👤 Milton Genser
Bibliographic Details
Claims Analysis
Total Claims: 8References Cited (Backward Citations)
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